NTK3043N
TYPICAL PERFORMANCE CURVES
0.3
2.5 V
0.3
V DS ? 5 V
V GS = 3 V to 10 V
T J = 25 ? C
0.2
2.2 V
2.0 V
0.2
0.1
1.8 V
0.1
T J = 25 ? C
T J = 125 ? C
1.6 V
0
0
1
2
3
4
1.4 V
5
0
1
1.5
T J = ? 55 ? C
2
2.5
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
5
4
3
I D = 0.255 A
T J = 25 ? C
6
5
4
T J = 25 ? C
V GS = 2.5 V
2
3
1
2
V GS = 4.5 V
0
1
2
3
4
5
6
7
8
9
10
1
0
0.1
0.2
0.3
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
I D, DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
9.0
8.0
7.0
6.0
V GS = 1.65 V, I D = 1 mA
V GS = 1.8 V, I D = 10 mA
1000
100
V GS = 0 V
T J = 150 ? C
5.0
4.0
3.0
V GS = 2.5 V, I D = 10 mA
10
T J = 125 ? C
2.0
1.0
V GS = 4.5 V, I D = 10 mA
0
? 50
? 25
0
25
50
75
100
125
150
1
5
10
15
20
T J , JUNCTION TEMPERATURE ( ? C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
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相关代理商/技术参数
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NTK3134NT1H 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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